Q-switching instability in a mode-locked semiconductor laser

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Q-switching instability in a mode locked semiconductor laser

We suggest analytic estimates for the Q-switching instability boundary of the continuous-wave mode-locking regime domain for a ring cavity semiconductor laser. We use a differential delay laser model that allows to assume large gain and loss in the cavity, which is a typical situation for this laser class. The slow saturable absorber approximation is applied to derive a map that describes the t...

متن کامل

Ultrashort Q-switched pulses from a passively mode-locked distributed Bragg reflector semiconductor laser.

A compact semiconductor mode-locked laser (MLL) is presented that demonstrates strong passive Q-switched mode-locking over a wide range of drive conditions. The Q-switched frequency is tunable between 1 and 4 GHz for mode-locked pulses widths around 3.5 ps. The maximum ratio of peak to average power of the pulse-train is >120, greatly exceeding that of similarly sized passively MLLs.

متن کامل

Optical linewidth of a passively mode-locked semiconductor laser.

We measured the optical linewidths of a passively mode-locked quantum dot laser and show that, in agreement with theoretical predictions, the modal linewidth exhibits a parabolic dependence with the mode optical frequency. The minimum linewidth follows a Schawlow-Townes behavior with a rebroadening at high power. In addition, the slope of the parabola is proportional to the RF linewidth of the ...

متن کامل

Multiple cross switching in a two-mode semiconductor laser

A multiple cross switching phenomenon is observed in a two-mode semiconductor laser in an external cavity. Its physical origins are investigated. The changing temperature or injection current causes the variation of the refractive index and the length of the laser diode, leading to the shift of the modulated gain peaks of the anti-reflection-coated laser diode in the external cavity. Consequent...

متن کامل

Injection locking of an actively mode-locked semiconductor laser.

We report what is to our knowledge the first observation of synchronous coherent injection locking of an actively mode-locked extended cavity semiconductor laser to an external light pulse train. In the temporal domain, we observed experimentally and verified theoretically a significant narrowing of the output pulse of the mode-locked laser. In the spectral domain, we demonstrated experimentall...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of the Optical Society of America B

سال: 2006

ISSN: 0740-3224,1520-8540

DOI: 10.1364/josab.23.000663